Ultrasonic Influence on the Characteristics of the Interface of the SDS of CdTe/СTO Structures


  • (1)  S. A. Muzafarova            Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan  
            Uzbekistan

  • (2)  M. N. Mamatkulov            Tashkent Institute of Chemical Technology  
            Uzbekistan

  • (3)  I. T. Bozorov            Tashkent Institute of Chemical Technology  
            Uzbekistan

  • (4)  K. M. Fayzullaev            Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent Institute of Chemical Technology,  
            Uzbekistan
    (*) Corresponding Author

Keywords:

ultrasound, defect, relaxation, generation, layer

Abstract

The effect of ultrasonic treatment on the generation characteristics of the interface between the PDP of CdTe/STO structures obtained by magnetron ion sputtering has been studied.

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References

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Published

2022-10-30

How to Cite

Muzafarova, S. A. ., Mamatkulov, M. N. ., Bozorov, I. T. ., & Fayzullaev, K. M. . (2022). Ultrasonic Influence on the Characteristics of the Interface of the SDS of CdTe/СTO Structures. Middle European Scientific Bulletin, 29, 221-224. Retrieved from https://cejsr.academicjournal.io/index.php/journal/article/view/1567

Issue

Vol. 29 (2022): October

Section

Education
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