Ultrasonic Influence on the Characteristics of the Interface of the SDS  of CdTe/СTO Structures

S. A.  Muzafarova; M. N.  Mamatkulov; I. T.  Bozorov; K. M.  Fayzullaev

doi:10.47494/mesb.v29i.1567

Ultrasonic Influence on the Characteristics of the Interface of the SDS of CdTe/СTO Structures

(1) S. A. Muzafarova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan
Uzbekistan
(2) M. N. Mamatkulov Tashkent Institute of Chemical Technology
Uzbekistan
(3) I. T. Bozorov Tashkent Institute of Chemical Technology
Uzbekistan
(4) K. M. Fayzullaev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent Institute of Chemical Technology,
Uzbekistan
(*) Corresponding Author

DOI:

https://doi.org/10.47494/mesb.v29i.1567

Keywords:

ultrasound, defect, relaxation, generation, layer

Abstract

The effect of ultrasonic treatment on the generation characteristics of the interface between the PDP of CdTe/STO structures obtained by magnetron ion sputtering has been studied.

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Published

2022-10-30

How to Cite

Muzafarova, S. A. ., Mamatkulov, M. N. ., Bozorov, I. T. ., & Fayzullaev, K. M. . (2022). Ultrasonic Influence on the Characteristics of the Interface of the SDS of CdTe/СTO Structures. Middle European Scientific Bulletin, 29, 221-224. https://doi.org/10.47494/mesb.v29i.1567

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Vol. 29 (2022): October

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Education

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