Growth of Clusters of Thermodonors in p-Silicon Under Gamma Irradiation

Оdil Raximov

doi:10.47494/mesb.v25i.1347

(1) Оdil Raximov Associate Professor at the Samarkand State Architectural and Civil Engineering Institute
Uganda
(*) Corresponding Author

DOI:

https://doi.org/10.47494/mesb.v25i.1347

Keywords:

embryos, thermodonor, centers, effective cross-section, quasi-point defects, proper-point defects, NA acceptors and ND donors

Abstract

It is confirmed that quasi-point clusters of donor–type defects occur in p-Si grown by the Chokhralsky method at temperatures (600 ° C and 900 ° C), the content of 3 to 10 defects in each. No such accumulations were found in pSi that were not subjected to heat treatment.

It has been experimentally established that as a result of gamma irradiation, clusters of donors in pSi grow (the number of donors included in them increases) if there are nuclei of clusters in the non-irradiated material.

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References

Vitovsky N. A. Method for determining the charge of quasi-point clusters of impurity atoms and the distribution function of clusters by their charge. FTP, 1982, Vol.5, pp. 882-885.

Bagraev N.T., Vlasenko A. S., Optical polarization of nuclei in silicon during optical pumping in weak magnetic fields. ZhETF, 1979, vol. 75 issue 5, pp. 1743-1754.

Bagraev N. T., Vlasenko L.S., Karpov Yu. A., Turovsky V.M. Decomposition of solid solution in dislocation-free silicon FTP, 1983, vol. 16, issue 2, with: 276-280.

Gaworzewski P., Schmalz К. On the Kinetiks of Thermal Donora in Oxygen-Rich Silicon in tne Range from 450 to 900°C Phys. Stat. Sol. (a) m 1980, v. 58, № 2, P, k 223-k 226.

Комалеев Ф. Н., Мордкевич В. Н., Темпер Э.М., Харченко В.А. Влияние термообработки и облучения на состояние кислорода в кремнии. ФТП, 1976, т. 10, вып. 2, с. 320-323.

Miller S.H., Tuynman СМ., Sieverts E. G., Ammerlaan C.A.J. Elektron paramannetic resonance on iron-related conters in silicon. Phys. Rev., 1982, v. 25, №1, p. 25-40.

Батавин В.В., Земко А.Е., Салманов А.Р., Шелоков А. Н. Тезисы докладов V Всесоюзной конференции по физ – хим основам легированных полупроводниковых материаллов. Москва, 1982, с. 124.

Gapper P., Jones A.W., Wallhouse E. J., Wilkes. J. G. The effects of heat treatments on dislocation-free oxygen-containing silicon crystals. J. Appl. Phys.,1997, v. 48,№4, p. 1646-1655.

Rakhimov, Z. O., Haitboev, R., Ibadullaev, N. E., & Safarov, B. S. (2018). Tour operating. Study guide. Tashkent:“Science and Technology.

Рахимов О. InP материалидаги акцептор мажмуаларининг гамма кванти таъсирида ҳосил бўладиган нуқтавий нуқсонлар билан ўзаро таъсири. Меъморчилик ва қурилиш муаммолари (илмий – техник журнал), № 3-4, Самарқанд, 2003, с. 64-67.

Рахимов О., Холдоров Н. Изменение электропроводимости в p-Si при облучении -квантами. “Ҳозирги замон физикасининг долзарб муаммолари” Республика илмий-назарий конференция. Термиз, 2006.

Рахимов О., Тугалов Ф. n-InP akseptor klastrlari o'lchamlari gamma-kvanti ta'sirida o'zgarishi. SamDAQI “Архитектура ва қурилиш соҳаларида инновацион технологияларни қўллаш истиқболлари” mavzusidagi хаlqаrо ilmiy – texnik konferensiyazi materiallari, II-qism, Samarqand, 2016 (27-28 may), 97-98. б.