Growth of Clusters of Thermodonors in p-Silicon Under Gamma Irradiation
Keywords:
embryos, thermodonor, centers, effective cross-section, quasi-point defects, proper-point defects, NA acceptors and ND donorsAbstract
It is confirmed that quasi-point clusters of donor–type defects occur in p-Si grown by the Chokhralsky method at temperatures (600 ° C and 900 ° C), the content of 3 to 10 defects in each. No such accumulations were found in pSi that were not subjected to heat treatment.
It has been experimentally established that as a result of gamma irradiation, clusters of donors in pSi grow (the number of donors included in them increases) if there are nuclei of clusters in the non-irradiated material.
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