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Growth of Clusters of Thermodonors in p-Silicon Under Gamma Irradiation

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Abstract

It is confirmed that quasi-point clusters of donor–type defects occur in p-Si grown by the Chokhralsky method at temperatures (600 ° C and 900 ° C), the content of 3 to 10 defects in each. No such accumulations were found in pSi that were not subjected to heat treatment.


It has been experimentally established that as a result of gamma irradiation, clusters of donors in pSi grow (the number of donors included in them increases) if there are nuclei of clusters in the non-irradiated material.

Abstract

It is confirmed that quasi-point clusters of donor–type defects occur in p-Si grown by the Chokhralsky method at temperatures (600 ° C and 900 ° C), the content of 3 to 10 defects in each. No such accumulations were found in pSi that were not subjected to heat treatment.


It has been experimentally established that as a result of gamma irradiation, clusters of donors in pSi grow (the number of donors included in them increases) if there are nuclei of clusters in the non-irradiated material.

Keywords

embryos
thermodonor
centers
effective cross-section
quasi-point defects
proper-point defects
NA acceptors and ND donors

Declarations

Conflict of Interest Statement

The author (s) declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.

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Cite this article as:

Оdil Raximov. (2022). Growth of Clusters of Thermodonors in p-Silicon Under Gamma Irradiation. Middle European Scientific Bulletin, 25, 21-27. Retrieved from https://cejsr.academicjournal.io/index.php/journal/article/view/1347
  • Submitted
    4 June 2022
  • Revised
    4 June 2022
  • Published
    3 June 2022